3. Requirements of EUV resist
EUV is highly absorbed by all materials, even EUV optical components inside the lithography tool are susceptible to damage, mainly manifest as observable ablation. Such damage that is associated with the high-energy process of generating EUV radiation is a new concern specific to EUV lithography .
EUVL's shorter wavelength also increases flare, resulting in less
4. Equipment
4.1 RCA cleaning
RCA cleaning is a series of rinsing procedure prior to experiment with Si wafer. The purpose of the RCA clean is to remove organic contaminants (such as dust particles, grease or silica gel) from the wafer surface. There are three steps to be performed. The first step is to remove organic contaminant from surface of wafer. Second step is to remove any oxide layer
structures on both planar and non-planar surfaces, and generate both 2D and 3D structures, while photo-lithography only on planar surface and 2D structures. Also, it doesn't need to use light or other high energy particles. Photo-lithography can be applied to only polymers with photo-sensitive, but soft lithography can be applied to various polymers, like unsensitized polymers, precursor polymers
Response to Stimulus
- A basic process of living systems
Kinds of External Stimuli
- Temperature, pH, Light, Electric Field,
Chemicals and Ionic Strength
Biomimicry or Biomimietics
- The examination of nature, its models, systems, processes, and elements to emulate or take inspiration from in order to solve human problems
Stimuli-responsive polymers
- Respond with dramatic propert
structures attached to silicon substrates, have received increasing attention for hot spot thermal management because these solid-state devices are compact, light weight, have no moving parts, and are capable of providing localized, high-flux, on-chip active cooling.
Table I provides the thermal and electrical properties for three typical thermoelectric materials, Bi2Te3, SiGe, and single-cr
Planar 방식에 비해 이방성
식각 특성을 향상시킨 구조이다.
평판 반응조 내의 유효면적을 늘리기 위해 중성 전극이 챔버 벽에 붙어 있음
플라즈마와 전극 사이의 전위차를 크게 해 주어 이온 충돌 세기 증대
RIE Apparatus
Plasma Etching system
주로 화학적인 반응에 의해 에칭 진행
이온의 충돌에